PMBF107 查看數據表（PDF） - Philips Electronics

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PMBF107

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

PMBF107

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a SOT23

envelope and intended for use as a

line current interruptor in telephone

sets and for applications in relay,

high-speed and line transformer

drivers.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VDS

ID

RDS(on)

drain-source voltage

drain current

drain-source on-resistance

VGS(th) gate-source threshold voltage

PIN CONFIGURATION

CONDITIONS MAX. UNIT

200 V

DC value

100 mA

ID = 20 mA

VGS = 2.6 V

ID = 1 mA

VGS = VDS

28 Ω

2.4 V

PINNING - SOT23

ndbook, halfpage

3

handbook, 2 columns

d

PIN

DESCRIPTION

1 gate

2 source

3 drain

1

Top view

2

MSB003

g

MBB076 - 1 s

Fig.1 Simplified outline and symbol.

April 1995

2

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