N5027-R-TA3-B-T 查看數據表（PDF） - Unisonic Technologies

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N5027-R-TA3-B-T

HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR

Unisonic Technologies 

N5027

TYPICAL CHARACTERISTICS(Cont.)

Reverse Operating Area

Collector Current vs. Collector-Emitter Voltage

100

I B2=-0.3A

10

1

0.1

0.01

10

100us

100

1ms

1000

Collector-Emitter Voltage, VCE (V)

10000

NPN SILICON TRANSISTOR

Power Derating

Power Dissipation vs. Case Temperature

80

70

60

50

40

30

20

10

0

0 25 50 75 100 125 150 175

Case Temperature, TC (℃)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R203-032,A

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