BSS 192
Power dissipation
Ptot = ƒ(TA)
1.2
W
1.0
Ptot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ -10 V
-0.16
A
ID
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
0
20 40 60 80 100 120 °C 160
TA
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Semiconductor Group
-285
V
-275
V(BR)DS-S270
-265
-260
-255
-250
-245
-240
-235
-230
-225
-220
-215
-60
-20
20
60
100 °C 160
Tj
5
18/02/1997