BF904 查看數據表（PDF） - Philips Electronics
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BF904 Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904; BF904R
handbook,1h2alfpage
ID
(mA)
8
MLD275
4
0
0
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V.
RG1 = 120 kΩ (connected to VGG); Tj = 25 °C.
Fig.12 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.20.
20
handbook, halfpage
ID
(mA)
15
10
5
R G1 = 47 kΩ 68 kΩ
MLD274
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
0
0
2
4
6
8
VGG = VDS (V)
VG2-S = 4 V.
RG1 connected to VGG; Tj = 25 °C.
Fig.13 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.20.
12
handbook, halfpage
ID
(mA)
8
4
MLD276
VGG = 5 V
4.5 V
4V
3.5 V
3V
handbook,4h0alfpage
I G1
(µA)
30
20
10
MLB945
VGG = 5 V
4.5 V
4V
3.5 V
3V
0
0
2
4
6
VG2 S (V)
0
0
2
4
6
VG2 S (V)
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
Fig.14 Drain current as a function of gate 2 voltage;
typical values; see Fig.20.
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
Fig.15 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.20.
1999 May 17
7
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