IRFBF20L 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

IRFBF20L

Power MOSFET

Vishay Semiconductors 

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L

Vishay Siliconix

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

D.U.T

+

-

Peak Diode Recovery dv/dt Test Circuit

+

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

-

+

RG

• dv/dt controlled by RG

+

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

- VDD

• D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

VGS=10V *

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

VDD

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

ISD

* VGS = 5V for Logic Level Devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91121.

Document Number: 91121

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

7

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