IRFB61N15D 查看數據表（PDF） - Inchange Semiconductor

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IRFB61N15D

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFB61N15D，IIRFB61N15D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA

VGS(th) Gate Threshold Voltage

VDS=VGS; ID =250μA

RDS(on) Drain-Source On-Resistance

VGS=10V; ID=36A

IGSS

Gate-Source Leakage Current

VGS= ±30V

IDSS

Drain-Source Leakage Current

VDS=150V; VGS= 0V

VSD

Diode forward voltage

Is=37A; VGS = 0V

MIN TYP MAX UNIT

150

V

3

5.5

V

32

mΩ

±0.1 μA

25

μA

1.3

V

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