IRFP244B 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

生产厂家

IRFP244B

250V N-Channel MOSFET

Fairchild Semiconductor 

November 2001

IRFP244B

250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converter and

switch mode power supplies.

Features

• 16A, 250V, RDS(on) = 0.28Ω @VGS = 10 V

• Low gate charge ( typical 47 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G!

G DS

TO-3P

IRFP Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

D

!

●

◀▲

●

●

!

S

IRFP244B

250

16

10.1

64

± 30

480

16

18

5.5

180

1.45

-55 to +150

300

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

--

0.69

0.24

--

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

Share Link: