HSM276S 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

HSM276S

Silicon Schottky Barrier Diode for Balanced Mixer

Hitachi -> Renesas Electronics 

HSM276S

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Reverse voltage

VR

Average rectified current IO

Junction temperature

Tj

Storage temperature

Tstg

Value

Unit

3

V

30

mA

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Reverse voltage

VR

3.0 — — V IR = 1 mA

Reverse current

IR

— — 50 µA VR = 0.5V

Forward current

IF

35 — — mA VF = 0.5V

Capacitance

C

— — 0.90 pF VR = 0.5V, f = 1 MHz

Capacitance deviation

∆C

— — 0.10 pF VR = 0.5V, f = 1 MHz

ESD-Capability*1

—

30 — — V C=200pF , Both forward and reverse

direction 1 pulse.

Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V

2

Share Link: