MMBT4403 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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MMBT4403

SOT-23 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JC(T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT4403 TRANSISTOR (PNP)

FEATURES

Switching transistor

MARKING ：2T

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-40

VCEO Collector-Emitter Voltage

-40

VEBO Emitter-Base Voltage

-5

IC

Collector Current

-600

PC

Collector Power Dissipation

300

RΘJA Thermal Resistance From Junction To Ambient

417

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

Rise time

Storage time

Fall time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEX

IEBO

hFE1

hFE2

hFE3

hFE4

hFE5

VCE(sat)

VBE(sat）

fT

td

tr

ts

tf

Test Conditions

IC=-100μA,IE=0

IC=-1mA,IB=0

IE=-100μA ,IC=0

VCB=-35V,IE=0

VCE=-35V, VBE=0.4V

VEB=-4V,IC=0

VCE=-1V, IC=-0.1mA

VCE=-1V, IC=-1mA

VCE=-1V, IC=-10mA

VCE=-2V, IC=-150mA

VCE=-2V, IC=-500mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

VCE=-10V, IC=-20mA,f =100MHz

VCC=-30V, VBE(off)=-0.5V

IC=-150mA , IB1=-15mA

VCC=-30V, IC=-150mA

IB1=IB2=-15mA

Min Typ Max Unit

-40

V

-40

V

-5

V

-0.1 μA

-0.1 μA

-0.1 μA

0

0

0

100

300

0

-0.4

V

-0.75 V

-0.95 V

-1.3

V

200

MHz

15

Qs

20

Qs

225

Qs

0

Qs

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