2SK996 查看數據表（PDF） - Inchange Semiconductor
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2SK996 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK996
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=25 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=480V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2A;
RL=75Ω
MIN TYP MAX UNIT
600
V
1.0
5.0
V
1.2
1.8
Ω
±1
uA
0.1
mA
40
ns
360
ns
isc website：www.iscsemi.cn
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