2SC2655G-Y-AE3-B(2011) 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
2SC2655G-Y-AE3-B Datasheet PDF : 4 Pages
| |||
2SC2655
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
2
A
Collector Current (Pulse) (Note 1)
ICP
3
A
Base Current
IB
0.5
A
SOT-23
Collector Power Dissipation
Pc
TO-92NL
350
mW
900
Junction Temperature
Storage Temperature
Note: 1. PW≦16ms, Duty Cycle≦50%.
TJ
TSTG
150
°C
-55 ~ +150
°C
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(TA=25°C, unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
BVCEO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(SAT)
VBE(SAT)
fT
COB
TEST CONDITIONS
IC= 10mA, IB= 0
VCB=50V, IE= 0
VEB= 5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB= 10V, IE= 0, f=1MHz
MIN TYP MAX UNIT
50
V
1.0 μA
1.0 μA
70
240
40
0.5
V
1.2
V
100
MHz
30
pF
Switching Time(Turn-on Time)
tON
0.1
μS
IB1= -IB2=0.05A
DUTY CYCLE≦1%
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70-140
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-013,F
Share Link: 