2SD1060 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SD1060 Datasheet PDF : 4 Pages
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Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector-emitter saturation voltage
·Complement to type 2SB824
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
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2SD1060
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICP
Collector current (Pulse)
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
60
50
6
5
9
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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