2SD718 查看數據表（PDF） - Inchange Semiconductor
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2SD718 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Base-emitter breakdown voltage
IC=50mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE
Base-emitter voltage
IC=5A ; VCE=5V
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
hFE Classifications
R
O
55-110
80-160
Product Specification
2SD718
MIN TYP. MAX UNIT
120
V
2.5
V
1.5
V
10
μA
10
μA
55
160
12
MHz
170
pF
2
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