2N5876 查看數據表（PDF） - SavantIC Semiconductor

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产品描述 (功能)

生产厂家

2N5876

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2N5875 2N5876

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·Complement to type 2N5877 2N5878

APPLICATIONS

·For general-purpose power amplifier

and switching applications

PINNING

PIN

1

2

3

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta= )

SYMBOL

PARAMETER

VCBO

Collector-base voltage

2N5875

2N5876

VCEO

Collector-emitter voltage

2N5875

2N5876

VEBO

Emitter-base voltage

IC

Collector current

ICM

Collector current-peak

IB

Base current

PD

Total Power Dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

TC=25

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

VALUE

-60

-80

-60

-80

-5

-10

-20

-4

150

200

-65~200

UNIT

V

V

V

A

A

A

W

VALUE

1.17

UNIT

/W

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