2N5191 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2N5191 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5190 2N5191 2N5192
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5190
2N5191 IC=0.1A; IB=0
2N5192
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=1.5A ;IB=0.15A
Collector-emitter saturation voltage IC=4A ;IB=1A
Base-emitter on voltage
IC=1.5A ; VCE=2V
2N5190 VCE=40V; IB=0
ICEO
Collector cut-off current 2N5191 VCE=60V; IB=0
2N5192 VCE=80V; IB=0
2N5190 VCB=40V; IE=0
ICBO
Collector cut-off current 2N5191 VCB=60V; IE=0
2N5192 VCB=80V; IE=0
2N5190
VCE=40V; VBE(off)=1.5V
TC=125℃
ICEX
Collector cut-off current 2N5191
VCE=60V; VBE(off)=1.5V
TC=125℃
2N5192
VCE=80V; VBE(off)=1.5V
TC=125℃
IEBO
Emitter cut-off current
VEB=5V; IC=0
2N5190
hFE-1
DC current gain
2N5191 IC=1.5A ; VCE=2V
2N5192
2N5190
hFE-2
DC current gain
2N5191 IC=4A ; VCE=2V
2N5192
fT
Transition frequency
IC=1A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.4
V
1.2
V
1.0 mA
0.1 mA
0.1
2.0
0.1
2.0
mA
0.1
2.0
1.0 mA
25
100
20
80
10
7
2
MHz
2
Share Link: 