2N5191 查看數據表（PDF） - Inchange Semiconductor
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2N5191 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5190 2N5191 2N5192
DESCRIPTION
·
·With TO-126 package
·Complement to type 2N5193/5194/5195
·Excellent safe operating area
APPLICATIONS
·For use in medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
2N5190
VCBO
Collector-base voltage 2N5191
2N5192
2N5190
VCEO
Collector-emitter voltage 2N5191
2N5192
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
40
60
80
40
60
80
5
4
7
1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
3.12
UNIT
℃/W
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