2SD1197 查看數據表（PDF） - Inchange Semiconductor

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2SD1197

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1197

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA

VBEsat Base-emitter saturation voltage

IC=5A; IB=10mA

ICBO

Collector cut-off current

VCB=80V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=5A ; VCE=3V

fT

Transition frequency

IC=5A ; VCE=5V

MIN TYP. MAX UNIT

100

V

110

V

0.9

1.5

V

2.0

V

0.1

mA

3.0

mA

1500 4000

20

MHz

2

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