2SD1197 查看數據表（PDF） - Inchange Semiconductor
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2SD1197 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1197
DESCRIPTION
·With TO-3PN package
·High DC current gain.
·Large current capacity and wide ASO.
·Low saturation voltage
·DARLINGTON
·Complement to type 2SB887
APPLICATIONS
·Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICP
Collector current (Pulse)
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
110
100
6
10
15
70
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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