IXSH45N120 查看數據表（PDF） - IXYS CORPORATION

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IXSH45N120

High Voltage, Low VCE(sat) IGBT

IXYS CORPORATION 

IXSH 45N120

Symbol

gfs

IC(on)

Cies

C

oes

Cres

Qg

Qge

Q

gc

td(on)

tri

td(off)

t

fi

Eoff

td(on)

t

ri

Eon

t

d(off)

tfi

Eoff

RthJC

RthCK

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IC = IC90; VCE = 10 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

VGE = 15 V, VCE = 10 V

V = 25 V, V = 0 V, f = 1 MHz

CE

GE

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

Inductive load, TJ = 25°C

IC = IC90, VGE = 15 V, L = 100 mH

V

CE

=

0.8

V,

CES

R

G

=

2.7

W

Remarks: Switching times may

increase for VCE (Clamp) > 0.8 • VCES,

higher TJ or increased RG

Inductive load, TJ = 125°C

IC = IC90, VGE = 15 V, L = 100 mH

VCE = 0.8 VCES, RG = 2.7 W

Remarks: Switching times may

increase for V (Clamp) > 0.8 • V ,

CE

CES

higher TJ or increased RG

26

S

170

A

4150

pF

285

pF

65

pF

150 200 nC

45 60 nC

75 100 nC

80

ns

250

ns

400

ns

1000

ns

21

mJ

80

ns

250

ns

7.1

mJ

450

ns

1200

ns

27

mJ

0.42 K/W

0.25

K/W

TO-247 AD (IXSH) Outline

Dim. Millimeter

Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F

5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H

- 4.5 -

0.177

J

1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L

4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2-4

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