BDX20 查看數據表（PDF） - Comset Semiconductors

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BDX20

SILICON TRANSISTORS EPITAXIAL BASE

Comset Semiconductors 

PNP BDX20

SILICON TRANSISTORS EPITAXIAL BASE

The BDX20 are mounted in TO-3 metal package.

LF Large Signal Power Amplification

High Current Fast Switching

Thermal Fatigue Inspection

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

VCEO

VCEX

VEBO

IC

IB

PTOT

TJ

TS

Collector to Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current – Continuous

Base Current – Continuous

Total Device Dissipation

Junction Temperature

Storage Temperature

VBE=1.5 V

Value

-60

-140

-160

-7

-10

-7

117

200

-65 to +200

Unit

V

V

V

V

A

A

W

°C

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJC

Thermal Resistance, Junction to Case

Value

1.5

Unit

°C/W

08/11/2012

COMSET SEMICONDUCTORS

1|3

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