IXFT12N100 查看數據表（PDF） - IXYS CORPORATION
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IXFT12N100 Datasheet PDF : 4 Pages
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IXFT 10N100 IXFT 12N100 IXFT 13N100
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
6 10
S
4000
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
310
pF
70
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 W (External),
21 50 ns
33 50 ns
62 100 ns
32 50 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
122 155 nC
30 45 nC
50 80 nC
0.42 K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V =0V
GS
ISM
Repetitive;
pulse width limited by TJM
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10N100
12N100
13N100
10 A
12 A
12.5 A
10N100
12N100
13N100
40 A
48 A
50 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5 V
t
rr
IF = IS
-di/dt = 100 A/ms,
T=
J
25°C
TJ = 125°C
250 ns
400 ns
QRM
VR = 100 V
TJ = 25°C
1
mC
TJ = 125°C
2
mC
IRM
TJ = 25°C
10
A
T=
J
125°C
15
A
TO-268AA (D3 PAK)
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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