BSP206 查看數據表（PDF） - Philips Electronics
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BSP206 Datasheet PDF : 12 Pages
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Philips Semiconductors
P-channel enhancement mode vertical
D-MOS transistor
Product specification
BSP206
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
−VDS
± VGSO
−ID
Drain current (peak)
Total power dissipation up to Tamb = 25 °C (note 1)
−IDM
Ptot
Storage temperature range
Tstg
Junction temperature
Tj
max.
60 V
max.
20 V
max. 350 mA
max. 700 mA
max. 1.5 W
−65 to + 150 °C
max. 150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
Rth j-a
=
83.3 K/W
Note
1. Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.5 mm; mounting pad for the drain lead min.
6 cm2.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
−ID = 10 µA; VGS = 0
Drain-source leakage current
−VDS = 48 V; VGS = 0
Gate-source leakage current
±VGS = 20 V; VDS = 0
Gate threshold voltage
−ID = 1 mA; VDS = VGS
Drain-source ON-resistance
−ID = 200 mA; −VGS = 10 V
Transfer admittance
−ID = 200 mA; −VDS = 15 V
Input capacitance at f = 1 MHz;
−VDS = 10 V; VGS = 0
Output capacitance at f = 1 MHz;
−VDS = 10 V; VGS = 0
Feedback capacitance at f = 1 MHz;
−VDS = 10 V; VGS = 0
Switching times (see Figs 2 and 3)
−ID = 200 mA; −VDD = 50 V;
−VGS = 0 to 10 V
−V(BR)DSS
−IDSS
±IGSS
−VGS(th)
RDS(on)
Yfs
Ciss
Coss
Crss
ton
toff
min.
max.
max.
min.
max.
typ.
max.
min.
typ.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
60 V
1.0 µA
100 nA
1.5 V
3.5 V
4.5 Ω
6Ω
100 mS
200 mS
55 pF
70 pF
30 pF
45 pF
8 pF
12 pF
4 ns
8 ns
15 ns
25 ns
April 1995
3
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