MPSA06 查看數據表（PDF） - Weitron Technology

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MPSA06

Driver NPN Transistors

Weitron Technology 

MPSA05

MPSA06

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

TYP

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC= 100 mAdc, VCE=1.0 Vdc)

Collector-Emitter Saturation Voltage

(IC= 100 mAdc, IB= 10 mAdc)

Base-Emitter Saturation Voltage

(IC= 100 mAdc, IB= 10 mAdc)

Current-Gain-Bandwidth Product

(IC= 10 mAdc, VCE= 2.0 Vdc, f=100 MHz)

hFE(1)

100

-

VCE(sat)

-

-

VBE(sat)

-

-

fT

100

-

-

-

0.25

Vdc

1.2

Vdc

-

MHz

300

VCE = 2.0 V

200 TJ = 25 C

100

70

50

30

2.0 3.0 5.0 7.0 10

20 30 50 70 100 200

IC, COLLECTOR CURRENT (mA)

F IG 1. C urrent-G ain B andwidth P roduc t

80

60

TJ = 25 C

40

Cibo

20

10

8.0

6.0

4.0

0.1 0.2

Cobo

0.5 1.0 2.0 5.0 10 20

VR, REVERSE VOL TAGE (VOLTS)

F IG 2. C apac itanc e

50 100

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