FPN630 查看數據表（PDF） - Fairchild Semiconductor

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FPN630

PNP Low Saturation Transistor

Fairchild Semiconductor 

FPN630

FPN630A

C

BE

TO-226

PNP Low Saturation Transistor

These devices are designed for high current gain and low

saturation voltage with collector currents up to 3.0 A continuous.

Sourced from Process PC.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

VCBO

VEBO

IC

TJ, Tstg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

30

35

5.0

3.0

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Max

FPN630 / FPN630A

1.0

50

125

Units

V

V

V

A

°C

Units

W

°C/W

°C/W

 1999 Fairchild Semiconductor Corporation

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