CM400HA-34H 查看數據表（PDF） - MITSUBISHI ELECTRIC

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CM400HA-34H

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM400HA-34H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

CM600HU-12H

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (Tc = 25°C)

Peak Collector Current (Tj ≤ 150°C)

Emitter Current** (Tc = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (Tc = 25°C)

Mounting Torque, M8 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

-40 to 150

-40 to 125

1700

±20

400

800*

400

800*

4100

8.83~10.8

Mounting Torque, M6 Mounting

–

1.96~2.94

Mounting Torque, M4 Terminal

–

0.98~1.47

Weight

–

980

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

4000

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

N·m

Grams

Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

ICES

IGES

VGE(th)

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

IC = 40mA, VCE = 10V

Collector-Emitter Saturation Voltage

Total Gate Charge

VCE(sat)

QG

IC = 400A, VGE = 15V

IC = 400A, VGE = 15V, Tj = 150°C

VCC = 750V, IC = 400A, VGE = 15V

Emitter-Collector Voltage

VEC

IE = 400A, VGE = 0V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Min.

Typ.

Max. Units

–

–

4

mA

–

–

0.5

µA

4.5

6.0

7.5

Volts

–

2.7

3.7** Volts

–

–

–*

Volts

–

2900

–

nC

–

–

3.4

Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Output Capacitance

Cies

Coes

VGE = 0V, VCE = 10V

Reverse Transfer Capacitance

Resistive

Turn-on Delay Time

Load

Rise Time

Switching

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Cres

td(on)

tr

td(off)

tf

trr

Qrr

VCC = 750V, IC = 400A,

VGE1 = VGE2 = 15V, RG = 10Ω

IE = 400A, diE/dt = –800A/µs

IE = 400A, diE/dt = –800A/µs

Min.

Typ.

Max. Units

–

–

85

nF

–

–

20

nF

–

–

15

nF

–

–

900

ns

–

–

1500

ns

–

–

1500

ns

–

–

800

ns

–

–

400

ns

–

7.0

–

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)

Per IGBT

–

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Rth(j-c)

Per FWDi

–

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ. Max. Units

–

0.030 °C/W

–

0.060 °C/W

–

0.023 °C/W

Sep.1998

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