Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG25AW; BFG25AW/X
handbook, full pagewidth
135 o
0.5
0.2
180 o 0
0.2
0.5
0.2
90 o
1.0
1
2
45 o
0.8
stability 0.6
circle
0.4
5
Fmin = 2.0 dB
0.2
Γopt
1
2
5
F = 3 dB
0o 0
F = 4 dB
F = 5 dB
5
0.5
135 o
1
90 o
f = 1 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
2
45 o
MLB978
1.0
Fig.13 Common emitter noise figure circles; typical values.
handbook, full pagewidth
135 o
0.5
0.2
unstable
region
180 o 0
0.2
0.5
90 o
stability
1
circle
F = 5 dB
2
F = 4 dB
F = 3 dB
Γopt
Fmin = 2.4 dB
45 o
5
1
2
5
1.0
0.8
0.6
0.4
0.2
0o 0
0.2
5
0.5
135 o
1
90 o
f = 2 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
2
45 o
MLB979
1.0
Fig.14 Common emitter noise figure circles; typical values.
1998 Sep 23
7