LL103A(2006) 查看數據表（PDF） - Vishay Semiconductors

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LL103A
(Rev.:2006)

Small Signal Schottky Diode

Vishay Semiconductors 

LL103A/103B/103C

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air I = 4 mm, TL = constant

Junction temperature

Storage temperature range

RthJA

250

K/W

Tj

125

°C

Tstg

- 65 to + 150

°C

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse breakdown voltage

IR = 50 µA

Leakage current

Forward voltage drop

Diode capacitance

Reverse recovery time

VR = 30 V

VR = 20 V

VR = 10 V

IF = 20 mA

IF = 200 mA

VR = 0 V, f = 1 MHz

IF = IR = 50 to 200 mA,

recover to 0.1 IR

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Part

Symbol

Min

Typ.

Max

Unit

LL103A V(BR)

40

V

LL103B V(BR)

30

V

LL103C V(BR)

20

V

LL103A

IR

5

µA

LL103B

IR

5

µA

LL103C

IR

5

µA

VF

370

mV

VF

600

mV

CD

50

pF

trr

10

ns

1000

100

10

1

0.1

0.01

0.001

0 100 200 300 400 500 600 700 800 900 1000

16765

VF - Forward Voltage (mV)

Figure 1. Forward Current vs. Forward Voltage

5

4

3

2

1

0

0.0

16766

0.5

1.0

1.5

2.0

VF - Forward Voltage (V)

Figure 2. Forward Current vs. Forward Voltage

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2

Document Number 85630

Rev. 1.4, 27-Jul-06

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