B1184 查看數據表（PDF） - KEXIN Industrial

零件编号

产品描述 (功能)

生产厂家

B1184

Power transistor

KEXIN Industrial 

SMD Type

Power transistor

2SB1184

Transistors

Features

Low VCE(sat).

PNP silicon transistor.

Epitaxial planar type

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation(Tc=25 )

Junction temperature

Storage temperature

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Symbol

Rating

Unit

VCBO

-60

V

VCEO

-50

V

VEBO

-5

V

IC

-3

A

PC

1

W

Tj

150

Tstg

-55 to +150

1 Base

2 Collector

3 Emitter

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Transition frequency

Symbol

Testconditons

BVCBO IC=-50ìA

BVCEO IC=-1mA

BVEBO IE=-50ìA

ICBO VCB=-40V

IEBO VEB=-4V

VCE(sat) IC= -2A, IB= -0.2A

hFE VCE= -3V, IC= -0.5A

fT VCE= -5V, IE=0.5A, f=30MHz

Cob VCB= -10V,IE=0A,f=1MHz

Min Typ Max Unit

-60

V

-50

V

-5

V

-1 ìA

-1 ìA

-1

V

82

390

70

MHz

50

pF

hFE Classification

Rank

hFE

P

82 180

Q

120 270

R

180 390

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