1N4448WS 查看數據表（PDF） - Gaomi Xinghe Electronics Co., Ltd.
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1N4448WS Datasheet PDF : 2 Pages
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星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
1N4148WS, 1N4448WS, 1N914BWS
Small Signal Diode / DATA SHEET (Preliminary)
◇ General purpose diodes
◇ Fast switching devices
◇ SOD323F Thin SMD package (Fig-1)
◇ RoHS compliant / Green EMC
◇ Matte Tin (Sn) Lead finish
◇ Moisture Level Sensitivity 1
◇ Cathode Band / Device marking
Device Marking Code
1N4148WS
S1
1N4448WS
S2
1N914BWS
S3
S1
0.65mm Typ
Fig.-1 Package. height
Absolute Maximum Ratings （Ta = 25 ℃）
Symbol
Parameter
VRSM
Non-Repetitive Peak Reverse Voltage
VRRM
Repetitive Peak Reverse Voltage
IFRM
Repetitive Peak Forward Current
IFSM
Non-Repetitive Peak Forward Current *1
IO
Continuous Forward Current
PD
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
*1 Pulse width = 1μs
Electrical Characteristics （Ta = 25 ℃）
Symbol
Parameter
Conditions
BVR Breakdown Voltage
IR = 100μA
IR = 5μA
IR
Reverse Current
VR = 20V
VR = 75V
VF
Forward Voltage
IF = 5mA *2
IF = 10mA
IF = 100mA *2
C
Capacitance
VR = 0V, f = 1MHz
TRR
Reverse Recovery Time
IF = 10mA, VR = 6V
IRR = 1mA, RL = 100Ω
Value
100
75
300
2
150
200
150
-55 to +150
Units
V
V
mA
A
mA
mW
℃
℃
Min
Max
Units
100
V
75
V
25
nA
5
μA
0.62
0.72
V
1
V
1
V
4
pF
4
ns
1
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