2SD1802 查看數據表（PDF） - Inchange Semiconductor

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2SD1802

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD1802

DESCRIPTION

·Large current capacitance and wide ASO

·Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller

·Low collector-to-emitter saturation voltage

·Fast switching speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Voltage regulators,relay drivers,lamp drivers,

electrical equipment

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

6

A

15

W

1.0

W

150

℃

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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