2SD1802L-U-TM3-R 查看數據表（PDF） - Unisonic Technologies

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2SD1802L-U-TM3-R

HIGH CURRENT SWITCHING APPLICATION

Unisonic Technologies 

2SD1802

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING ( TA= 25℃, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

Collector Power Dissipation

TC=25℃

Pc

1

W

15

Collector Current (DC)

IC

3

A

Collector Current (PULSE)

ICP

6

A

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from –20℃~85℃.

„ ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain (note)

Gain-Bandwidth Product

Output Capacitance

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

Turn-on Time

Storage Time

Fall Time

SYMBOL

ICBO

IEBO

hFE1

hFE2

fT

COB

VCE(SAT)

VBE(SAT)

V(BR)CBO

V(BR)CEO

V(BR)EBO

tON

tSTG

tF

TEST CONDITIONS

VCB=40V, IE =0

VEB=4V, IC=0

VCE=2V, IC=100mA

VCE=2V, IC=3A

VCE=10V, IC=50mA

VCB=10V, f=1MHz

IC= 2A, IB=100mA

IC= 2A, IB=100mA

IC= 10μA, IE=0

IC= 1mA, RBE=∞

IE= 10μA, IC=0

See test circuit

See test circuit

See test circuit

„ CLASSIFICATION OF hFE1

MIN TYP MAX UNIT

1

μA

1

μA

100

560

35

150

MHz

25

pF

0.19 0.5

V

0.94 1.2

V

60

V

50

V

6

V

70

ns

650

ns

35

ns

RANK

RANGE

R

100-200

S

140-280

T

200-400

U

280-560

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R209-001.Ba

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