BC847AW 查看數據表（PDF） - Philips Electronics
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BC847AW Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846W; BC847W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
fT
F
collector cut-off current
IE = 0; VCB = 30 V
−
−
15 nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
µA
emitter cut-off current
IC = 0; VEB = 5 V
−
−
100 nA
DC current gain
BC846W
IC = 2 mA; VCE = 5 V;
see Figs 2, 3 and 4
110 −
450
BC847W
110 −
800
BC846AW; BC847AW
110 −
220
BC846BW; BC847BW
200 −
450
BC847CW
420 −
800
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
−
250 mV
IC = 100 mA; IB = 5 mA; note 1
−
−
600 mV
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−
700 −
mV
IC = 100 mA; IB = 5 mA
−
900 −
mV
base-emitter voltage
IC = 2 mA; VCE = 5 V
580 −
700 mV
IC = 10 mA; VCE = 5 V
−
−
770 mV
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
3
pF
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −
−
MHz
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ; −
−
10 dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 23
3
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