BC846 查看數據表（PDF） - Philips Electronics
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BC846 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
600
handbook, halfpage
hFE
500
MGT727
(1)
400
(2)
300
200
(3)
100
0
10−1
1
10
102
103
IC (mA)
BC847B; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
1200
hanVdBboEok, halfpage
(mV)
1000
(1)
800
(2)
600
400
(3)
MGT728
200
0
10−2
10−1
1
10
102
103
IC (mA)
BC847B; VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
104
handbook, halfpage
VCEsat
(mV)
103
MGT729
102
(1)
(3) (2)
10
10−1
1
10
102
103
IC (mA)
BC847B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
hVanBdEbosoakt, halfpage
(mV)
1000
(1)
800
(2)
600
(3)
400
MGT730
200
0
10−1
1
10
102
103
IC (mA)
BC847B; IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Feb 06
6
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