2N3773 查看數據表（PDF） - Inchange Semiconductor
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2N3773 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3773
DESCRIPTION
·With TO-3 package
·Complement to type 2N6609
·High DC current gain
·Low saturation voltage
·High safe operating area
APPLICATIONS
·Designed for high power audio, disk head
positioners and other linear applications.
These devices can also be used in power
switching circuits such as relay or solenoid
drivers, dc to dc converters or inverters.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
Total Power Dissipation
PD
Derate above 25℃
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
160
140
7
16
30
4
15
150
0.855
150
-65~200
UNIT
V
V
V
A
A
A
A
W
W/℃
℃
℃
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