BUX85F 查看數據表（PDF） - Philips Electronics
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BUX85F Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84F; BUX85F
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems.
PINNING
PIN
1
2
3
mb
DESCRIPTION
base
collector
emitter
mounting base;
electrically isolated
from all pins
2
1
MBB008
3
1 2 3 MBK109
Fig.1 Simplified outline
(SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUX84F
BUX85F
VCEO
collector-emitter voltage
BUX84F
BUX85F
VCEsat
ICsat
IC
ICM
Ptot
tf
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
VBE = 0
open base
see Fig.4
Th ≤ 25 °C
TYP.
MAX.
UNIT
−
800
V
−
1 000
V
−
400
V
−
450
V
−
1
V
−
1
A
−
2
A
−
3
A
−
18
W
0.4
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-h
Rth j-a
thermal resistance from junction to external heatsink
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
7.2
4.7
55
UNIT
K/W
K/W
K/W
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
VisolM
Cisol
isolation voltage from all terminals to external heatsink (peak value) −
isolation capacitance from collector to external heatsink
12
MAX.
1 500
−
UNIT
V
pF
1997 Aug 14
2
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