BUL791 查看數據表（PDF） - Bourns, Inc
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BUL791 Datasheet PDF : 6 Pages
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BUL791
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
10
L791CI2
IB(on) = IC / 5
tsv
IB(off) = IC / 8
tfi
VCC = 40 V
VCLAMP = 300 V
L
= 1 mH
TC = 25°C
1·0
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
10
L791CI4
IB(on) = 400 mA, VCC = 40 V, L = 1 mH
IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A
1·0
0·1
0·1
1·0
IC - Collector Current - A
Figure 5.
tsv
tfi
0·1
10
0
20
40
60
80
100
TC - Case Temperature - °C
Figure 6.
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
L791CR1
10
IB(on) = IC / 5, VCC = 300 V
IB(off) = IC / 5, TC = 25°C
RESISTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
L791CR2
10
IB(on) = 400 mA, VCC = 300 V
IB(off) = 400 mA, IC = 2 A
1·0
1·0
tsv
tfi
0·1
0·1
1·0
IC - Collector Current - A
Figure 7.
4
tsv
tfi
0·1
10
0
20
40
60
80
100
TC - Case Temperature - °C
Figure 8.
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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