MJH16018 查看數據表（PDF） - Inchange Semiconductor

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MJH16018

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJH16018

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

800

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A ;IB= 1A

IC= 5A ;IB= 1A ;TC=100℃

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 4A

VBE(sat) Base-Emitter Saturation Voltage

ICEV

Collector Cutoff Current

IC= 5A ;IB= 1A

IC= 5A ;IB= 1A ;TC=100℃

VCEV=1500V,VBE(off)=1.5V

VCEV=1500V,VBE(off)=1.5V;TC=100℃

ICER

Collector Cutoff Current

VCE=1500V;RBE=50Ω;TC=100℃

V

1.5

2.0

V

1.5 V

1.5

1.5

V

0.25

1.5

mA

2.5 mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

1.0 mA

hFE

DC Current Gain

IC= 5A ; VCE= 5V

7

COB

Output Capacitance

IE= 0; f= 1kHz ; VCB= 10V

400 pF

Switching times; Resistive load

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC=5A; IB1= 1A;IB2= -2A;

VCC= 250V ,RB2= 3Ω;

PW=30μs

Duty Cycle≤2%

0.05 0.1 μs

0.3 0.4 μs

2

3 μs

0.9 1.2 μs

isc Website：www.iscsemi.cn

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