SMK0965FC 查看數據表（PDF） - Kodenshi Auk Co., LTD
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SMK0965FC Datasheet PDF : 8 Pages
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SMK0965FC
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
Drain-source cut-off current
IDSS
VDS=650V, VGS=0V
Gate leakage current
Drain-source on-resistance
④
Forward transfer conductance ④
IGSS
RDS(on)
gfs
VDS=0V, VGS=±30V
VGS=10V, ID=4.5A
VDS=10V, ID=4.5A
Gate Resistance
Rg
VGS=0V, VDS=0V, f=1MHz
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V
f=1 MHz
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=300V, ID=9A
RG=25Ω
③④
Fall time
tf
Total gate charge
Gate-source charge
Gate-drain charge
Qg
VDS=520V, VGS=10V
Qgs
ID=9A
Qgd
③④
Min.
650
2.0
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
Typ. Max.
-
-
-
4.0
-
1
- ±100
0.72 0.85
11
-
1.5
7
2040 2550
153 192
16
20
23
-
69
-
144
-
77
-
35
57
10
-
9
-
Unit
V
V
uA
nA
Ω
S
Ω
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
IS
Integral reverse diode
①
ISM
in the MOSFET
④
VSD
VGS=0V, IS=9A
-
-
9
-
-
36
-
-
1.4
Reverse recovery time
Reverse recovery charge
trr
IS=9A, VGS=0V
Qrr
dIF/dt=100A/us
-
420
-
-
4.2
-
Unit
A
V
ns
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=5.7mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25℃
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T0O108-000
2
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