INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5244
DESCRIPTION
·High breakdown voltage, and high reliability
·Wide area of safe operation (ASO)
·High-speed switching
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Pulse
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
30
A
200
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
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