MMSF3P03HD 查看數據表（PDF） - ON Semiconductor
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MMSF3P03HD Datasheet PDF : 12 Pages
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MMSF3P03HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
−
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
−
−
IGSS
−
VGS(th)
1.0
−
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
−
−
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
QT
−
(VDS = 24 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
trr
−
(IS = 3.0 Adc,
dIS/dt = 100 A/µs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
1. Negative sign for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
−
−
30
−
mV/°C
µAdc
−
1.0
−
10
5.0
100
nAdc
1.5
3.9
0.080
0.090
5.0
2.0
−
0.100
0.110
−
Vdc
mV/°C
Ohm
mhos
1015
1420
pF
470
660
135
190
26
52
ns
102
204
67
134
69
138
14
28
32
64
104
208
66
132
32.4
45
nC
2.7
−
9.0
−
6.9
−
Vdc
1.3
2.0
0.85
−
31
−
ns
22
−
9.0
−
0.034
−
µC
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