2SC1106 查看數據表（PDF） - Inchange Semiconductor

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2SC1106

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1106

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

250

V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0

350

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

6

V

VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A

5.0

V

VBEsat Base-emitter saturation voltage

IC=1.5A; IB=0.3A

1.5

V

ICBO

Collector cut-off current

VCB=350V; IE=0

0.1 mA

IEBO

Emitter cut-off current

固I电NC半H导A体NGE SEMICONDUCTOR hFE

DC current gain

VEB=5V; IC=0

IC=0.2A ; VCE=5V

0.1 mA

30

2

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