2SC1106 查看數據表（PDF） - Inchange Semiconductor
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2SC1106 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1106
DESCRIPTION
·With TO-3 package
·High power dissipation
·High breakdown voltage
APPLICATIONS
·For voltage regulator ,inverter and switching
mode power supply applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
350
250
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
PC
Collector power dissipation
TC=25℃
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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