BC876 查看數據表（PDF） - Siemens AG

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BC876

PNP Silicon Darlington Transistors

Siemens AG 

DC current gain hFE = f (IC)

VCE = 10 V, TA = 25 ˚C

BC 876

… BC 880

Transition frequency fT = f (IC)

VCE = 5 V, f = 20 MHz

Collector-emitter saturation voltage

VCEsat = f (IC)

Parameter = IB, TA = 25 ˚C

Base-emitter saturation voltage

VBEsat = f (IC)

Parameter = IB, TA = 25 ˚C

Semiconductor Group

4

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