BF245 查看數據表（PDF） - ON Semiconductor
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BF245 Datasheet PDF : 8 Pages
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BF245A BF245B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
Output Admittance
Forward Transfer Admittance
Reverse Transfer Admittance
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
(VDS = 20 Vdc, –VGS = 1.0 Vdc)
Yfs
Yos
Yfs
Yrs
Ciss
3.0
—
6.5 mmhos
—
40
— mmhos
—
5.6
— mmhos
—
1.0
— mmhos
—
3.0
—
pF
Reverse Transfer Capacitance
Output Capacitance
Cut–off Frequency(3)
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
(VDS = 15 Vdc, VGS = 0)
Crss
Coss
F(Yfs)
—
0.7
—
pF
—
0.9
—
pF
—
700
—
MHz
3. The frequency at which gfs is 0.7 of its value at 1 kHz.
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
5.0
3.0
bis @ IDSS
2.0
1.0
0.7
gis @ IDSS
0.5
0.3
gis @ 0.25 IDSS
0.2
brs @ IDSS
0.25 IDSS
bis @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis)
0.1
0.07
0.05
10
20 30
grs @ IDSS, 0.25 IDSS
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Reverse Transfer Admittance (yrs)
20
10
7.0
gfs @ IDSS
5.0
3.0
gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30
50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30
50 70 100 200 300 500 7001000
f, FREQUENCY (MHz)
Figure 4. Output Admittance (yos)
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