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NJW4184DL3-05A 查看數據表(PDF) - Japan Radio Corporation

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NJW4184DL3-05A Datasheet PDF : 13 Pages
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NJW4184
*The notes of the evaluation when the VO pin is shorted to GND
When evaluated short circuit test, the IC may break down because of regenerated energy by the parasitic inductance
included in wiring pattern.
It phenomenon appears conspicuously when output voltage is high(Vo=8.0V or more)or connected to inductive load.
In case of short circuit in actual application, not likely to destruction of IC because of some of Resistance exist
between load.
If happened above phenomenon by the short circuit test with the actual application, recommend connecting schottky
barrier diode(SBD) between the VO pin and GND or using output capacitors that have ESR more than 2like a
tantalum or aluminum electrolytic capacitor.(see below figure)
(a)In case of insert Schottky barrier diode between the VO pin to GND
V IN
V IN
VOUT
VOUT
NJW 4184
SBD
GND
(b) In case of using the electrolysis condenser or insert series resistance
VIN
VIN
VOUT
NJW4184
VOUT
GND
Connecting resistance(2or more)in series.
(in case of ESR of COUT is low)
-8-
Ver.2012-06-27

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