SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3856
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=200V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
COB
Output capacitance
fT
Transition frequency
Switching times
IC=3A ; VCE=4V
IE=0 ; VCB=10V,f=1MHz
IC=0.5A ; VCE=12V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4B
IB1=- IB2=1A
VCC=40V
MIN TYP. MAX UNIT
180
V
2.0
V
100 µA
100 µA
50
180
300
pF
20
MHz
0.50
µs
1.80
µs
0.60
µs
hFE Classifications
O
P
50-100
70-140
Y
90-180
2