3SK297 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

3SK297

Silicon N-Channel Dual Gate MOS FET

Renesas Electronics 

3SK297

Noise Figure vs. Drain to Source Voltage

5

4

3

2

1

VG2S = 3 V

ID = 10 mA

f = 900 MHz

0

2

4

6

8 10

Drain to source voltage VDS (V)

Rev.3.00 Aug 10, 2005 page 5 of 8

Share Link: