2SC6037J 查看數據表（PDF） - Panasonic Corporation
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2SC6037J Datasheet PDF : 3 Pages
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Transistors
2SC6037J
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2161J
Features
Low collector-emitter saturation voltage VCE(sat)
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
15
V
VCEO
12
V
VEBO
5
V
IC
500
mA
ICP
1
A
PC
125
mW
Tj
125
°C
Tstg –55 to +125 °C
1.60+−00..0053
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5°
Unit: mm
0.12+−00..0031
1: Base
2: Emitter
3: Collecter
Marking Symbol : 4U
SSMini3-F1 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
15
V
Collector-emitter voltage (Base open)
VCEO IC = 1 mA, IB = 0
12
V
Emitter-base voltage (Collector open)
VEBO IE = 10 µA, IC = 0
5
V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1
µA
Forward current transfer ratio
hFE VCE = 2 V, IC = 10 mA
270
680
Collector-emitter saturation voltage
VCE(sat) IC = 200 mA, IB = 10 mA
250
mV
Transition frequency
fT VCB = 2 V, IE = –10 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, f = 1 MHz
4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
SJC00325AED
1
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