BD720 查看數據表（PDF） - Inchange Semiconductor

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BD720

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD720

DESCRIPTION

·DC Current Gain-

: hFE= 40@ IC= -0.5A

·Collector-Emitter Breakdown Voltage -

: V(BR)CEO= -60V(Min)

·Complement to type BD719

APPLICATIONS

·Designed for use in audio output and general purpose

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

-60

VCEO

Collector-Emitter Voltage

-60

VEBO

Emitter-Base Voltage

-5

IC

Collector Current-Continuous

-4

ICM

Collector Current-Peak

-7

IBB

Base Current-Continuous

-1

PC

Collector Power Dissipation

@ TC=25℃

30

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

A

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

3.5 ℃/W

Thermal Resistance,Junction to Ambient 100 ℃/W

isc Website：www.iscsemi.cn

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