2N3879 查看數據表（PDF） - Inchange Semiconductor
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2N3879 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3879
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High sustaining voltage
APPLICATIONS
·For high-speed switching and linear-
amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO(SUS) Collector-emitter sustaining voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
120
75
7
7
10
5
35
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
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